中古 NIKON NSR SF200 #9222705 を販売中

KrF Stepper, 8"-12" Minicomputer system Liquid crystal monitor Operational panel Stage controller Alignment controller Panel controller Lens controller Wafer loader controller Reticle loader controller S/G Conversion unit Signal monitor unit Stage power amplifier Reduction projection optical system: Reduction ratio: 1/4 N.A: 0.50 - 0.63 (Variable) Lens distortion: ≦±20 nm (Including magnification error) Exposure area: 26 mm x 33 mm Exposure wavelength: KrF Excimer laser (248nm) Wavelength stability: ±0.10 μm Spectral bandwidth (FWHM): ≦0.8 μm Illumination optical system: Maximum exposure frequency: 2000 Hz Illumination uniformity: ≦±1.0% Integrated exposure accuracy: ±1.3% Integrated exposure matching: ±1.2% Dose setting range: 1mJ/cm2-1J/cm2 & 0 Coherency factor: 0.3-0.8 (Lens NA 0.63) Auto reticle blind system: Blind configuration: Focused type Minimum blind setting range: 2.0 mm x 2.0 mm Setting accuracy: +0.4 mm to +0.8 mm Reticle interferometer system: Configuration: Three axes (X, Y, θ) Interferometer minimum reading unit: 1.2 nm Reticle table: Configuration: Three axes (X, Y, θ) Stroke: ≧±1.1 mm for each axis Angle of rotation: ±1° Reticle holder: 6" Position control: Closed-loop servo control Reticle alignment system: Reticle loading: Automatic from reticle loader Alignment method: Bright-field off-axis under Broadband illumination TV image processing Observation system: Display on ITV monitor Field image alignment (FIA) system: Observation system: 79x / 490x Functions: Fine alignment Search alignment Visual observation during manual assist mode Auto focus system: Detection method: Broadband light detection (Multi point sensor) Repeatability: ±100 nm Vertical stroke: 0.6 mm Focus offset input range: ±10 μm Auto focus tracking range: ±0.3 mm Auto focus spot: Maximum 9 points selected from total 29 points Auto leveling system: Detection method: Broadband light detection method (2 Dimension multi point sensor) Target plane: Image plane of projection lens Accuracy: ±1.5 sec (Relative to the target plane) Repeatability: ±1.0 sec Leveling offset input: ±10 sec Amendable tilt: 2.6 minutes (Relative to wafer backside) Wafer interferometer system: Configuration: Five axes (X1, X2, X3, Y1, Y2) Minimum reading unit: 0.6 nm Each axis Laser wavelength correction: Automatic Wafer X-Y stage: Stroke: ≧300 mm in X and Y directions Positioning control: Closed-loop servo control Using laser interferometer Stepping precision: 18 nm Array orthogonality: ≦±0.1” (After correction by software) Wafer table: Wafer table rotation angle: ±1° Wafer holder: 300 mm / 200 mm Reticle loader: Storage capacity: Standard 10 Reticle: Size: 6 x 6 Thickness: 0.25" Material: Quartz glass Type: Low-reflective chromium mask (Single-layer chromium) Options: Test reticle Extended wafer carrier table On-line application Laser step alignment (LSA) Lithography information control system (LINCS) Reticle bar-code reader Extended reticle library FU PPD R.E.T (Resolution enhancement technology) Power change (Correspondence high sensitivity resist with ND filter).