中古 ASML Twinscan XT 1250D #9238020 を販売中
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ID: 9238020
ウェーハサイズ: 12"
ヴィンテージ: 2004
ArF Scanner, 12"
Track pre-warning signal: APR
Input / Output conflicts
No closing disk type
Type of wafer table on chuck 1 and 2: Zerodur
Wafer stage: Type 2
Wafer carrier location: Right
(25) Wafers per carriers
Wafer stage types: Dual chuck
Lower docking plates
WS Balance mass: Stainless steel
WH Robot power amplifier: CPM 20
Wafer stage fast stiff X move electronics
Wafer stage mirror block down electronics
UNIVERSAL Pre-alignment
Interferometer axis version at exposure: 3 Plus, 1 Axis
Dedicated wafer handling pneumatic
Chuck 1 and 2, 12"
Specifies chuck 1 and 2 config: Dry
Docking wheels at WH unload
Docking plate height: Low
Carrier handler type: Mark I 300 Foup
Wafer handling load: Double fold arm, 12 mm
Unload robot type: Z Stroke
Wafer handler WRT BF shifted in Z: Not shifted
No enhancements in reticle monitor
Encoders measurement system: Hall sensors for zeroing
Reticle stage chuck type:
Glued leaf spring:
Type 2: Glued LS, Pneumatic GC, IFM / ENC
Reticle carrier location: Right
Integrated reticle inspection system: PPD1 With IRIS1
Integrated reticle library: IRL
Reticle, 6"
Reticle carrier tag reader
Reticle stage long stroke motor type: Cobalt ferro 18 teeth
Reticle stage long stroke config type 3:
CoFe-18 Motor
SB Controller
Vacuum supply
Pneum GC
Reticle stage: Lens cooler box with anti-aliasing filter
Maximum reticle ID length: 24 Characters
Reticle stage measurement system on scan: HEIDENHAIN Encoder
Relative direction of WS to RS on the X axis
RS Object field
Reticle exchange type: Retex E option
Reticle handler type: Original
Integrated reticle inspection system
Dynamic performance calculation: Mark 1
Stages sample rate: 5.0 kHz
Interferometer electronic
Capacitive Z-height sensor type: Dual Z sensor board
IFM Config at measure side: 8-Axes
Dose system performance test sequence: Test sequence 1
PEP-ADC Intensity: Disable PEP-ADC intensity
Online lamp peak
Dose intensity optimization
Laser gas life extension
Depolarizer type: Fixed depolarizer
Intensity calibration per DOE
Pupil qualification method: Centre of gravity method
Unpolarized illumination amorph DOE
Fresnel corrections for WSSS
IS NA Accuracy measurement allowed
No exchangeable pupil lens element
No sigma calibration
No sigma WIP preserving offset
THFFC FDE Model lens dependent
Determination of NA ellipticity
XML Output for lithoguide
Validity range: Exact matching for UIP data
Active element: ALE
No polarization shaping element retractor hardware
BMU Reading: DOE1 Plane
Lens type: 12
Light-source architecture: Laser
Light-source type: CYMER XLA 165 Laser
Light-source wave-length: 193 nm
Dose mapper
REMA Architecture: REMA C
Illuminator type: 120
Zoom AXICON architecture: ZZA / 120
Automated DOE exchanger / Architecture: 5 Slots MIP control
UNICOM / Architecture: Motor
Imaging electronics architecture: B Architecture
Attenuator type
Dose mapper 1
Test table Z-axis: Worm wheel
PUPICOM / Architecture: DC Motor with gearbox
(5) Z Lens manipulators
Active lens element
Active element
(4) Semi-active X-Y lens manipulators
Setup sensor board
Imaging generic power amplifier
Imaging control rack configuration
Projection multiplexer board
LEC Rack in electronic architecture
Projection GPA configuration
(5) Lens NEXZ Manipulators
Spot sensor surface coating: Bilatal
Energy sensor: VLOC
Spot sensor chuck 1 and 2: VLOC
Uniformity improvement package
Pupil measurements with ILIAS
Beam control: Beam adjustment
Extended spot sensor matching
(5) Rxms / (5) Ryms
Exchangeable last lens element
UV Shutter
Dose control hardware: ISB
Illuminator platform: Aerial 2
Test table architecture: Aerial 2
Illumination mode
DUV Light source power level: 45.00 Watt
Lens top tool connection
Scanning energy sensor calibration
Position of spot sensor on chuck 1 and 2: Layout 1
Z-Capture for low reflectivity wafer
TIS Plate deformation correction
FSM Flexibility package
Field width optimized leveling
Constrained fit
No leveling throughput improvement on measure side
Point-to-point LS machine matching
Circuit dependent FEC
Focus monitoring
Extended LS area
Air gauge
No air gauge device present
Reticle shape correction (Over rule)
LS Focus node 3
Level sensor processing rack
LS PEMM Config
LS CPU Config: (3) CPU
Base liner overlay high order intrafield
Base liner focus high order intrafield
Base liner focus control
Log missed translation
Recipe creator: Light
Lot report data category: Enhanced diagnostic
CDC
Proximity matching
MBDS Control
Enhanced exposure 1
Data collection not covered by focus and overlay: Inform pro data collection
Overlay data collection
XML Lot report content level: Basic
Enable to support SMASH XY mark type
Mark type: ASML Mark
Alignment laser configuration: 2 Color laser
OADB Improved dynamic range
Boards: ODB With ADB
Athena narrow marks Twinscan
Alignment sensor types: Athena narrow marks OM
Athena focus improvement 1
Maximum alignment speed: Setting 2
AACR Processing rack
Purging configuration 3
Ultra pure water flow controller (WICC)
LCW Circuit set-ups
Clean air configuration
CT Miscellaneous rack
Clean air temperature controls: Driver and ACC
Purge hoods configuration: Compressed clean air and extremely clean dry air
Metro frame type: Type 1
Inlet restriction for clean air: Inlet restriction at right side
Reticle stage purged mini environment
Gas control unit type: High Flow (HF)
Readout location of pneumatic facility unit sensor: Machine Base Diagnostics System (MBDS)
Lens circuit water flow: High
Motor circuit water flows: Normal
SPM Temperature correction for lens axis
IFM Laser configuration: AOM Re-combo laser
Position control rack configuration: Rack configuration type 3
Position control power rack configuration type 3: Stages power rack upto E-spec
(5) Motion controllers
Position and motion control rack
Reticle stage short stroke X/Y11/Y12/Y21/Y22/Y11/Y11 amp: PADC 100 V / 16 A
Wafer stage short stroke 1 XY1/ XY2/XY3 amp: PADC 100 V / 16 A
Wafer stage short stroke 2 XY1/ XY2/XY3 amp: PADC 100 V / 16 A
Reticle stage short stroke Z1/Z2/Z3 amp: Pass low current 8.5 A
Wafer stage short stroke 1/2 Z1/Z2/Z3 amp: Pass low current 8.5 A
Reticle stage long stroke Y11/Y12/Y21/Y22 amp: 450 V, 20 A PAAC
Reticle balance mass 1/2 amp: 450 V, 20 A PAAC AT-pepD
Wafer stage long stroke E/M X amp: 400 V, 16 A PAAC AT-D
Wafer stage long stroke E/M Y1/Y2/CS amp: 400 V, 16 A PAAC AT-D
Wafer stage balance mass 11/12/21/22 amp: 325 V, 14 A PAAC AT-C
Pressure update rate: 2 Hz / 4 Hz
Test stream
PEP Image streaming
Overhead reductions: LOR2
Extended zone alignment
Intrafield higher order process correction
SMASH Reuse capture information in stage alignment
Wafer plane deviation check with focus monitoring
Parameter indicates how long overlay data will be stored: Short Retention period
Level sensor RY drift correction
Fading control switch
Automated lens heating calibration
TIS Align set
Image fading control
Grid mapper
2D Grid correction
Double TIS scan
Symmetrical reticle alignment
AST Offset correction: TIS LHFB/LOCO
NEXZ-Tilt per exposure
Projection lens: No off-axis slit
Improved edge field leveling
Enhanced throughput reticle alignment
Adjustable wavelength
Alignment report encryption
Stage alignment filter
Lot correction sequence: Type B
Lens heating feedback
ALE 1 Uses: Lens heating
Overlay node: Level 0
E-Chuck flatness qualification test
Layout version number: TIS Plate 1 and 2 on chuck 1/2
Wavelength / Energy sensor
AM Controller hardware: SUCR
Lithoguide:
SAMOS Stray light test
PUPIL Measurement
FOCAL Measurement
Leveling verification test
ILIAS Sensor location: Chuck 2
ILIAS Sensor type chuck 2: Multiple scan grid
SASO Robustness and fiber connectivity
Extended X width masking range
PDO Offset for EFL LS spot
Patch strategy: Patch level
Basic chuck dedication
No RMCS client
MDL Viewer: Site view
ZERO Fiducial: ILIAS MK2
XT Machine architecture
XT Architecture revision: Rev 1
2004 vintage.
ASML Twinscan XT 1250Dは、微細加工のサイズ、複雑さ、コストを削減するために設計された精密ウェーハステッパーです。このユニットは、共通フレームに取り付けられ、単一の制御装置によって駆動される2つの同期動作レーザースキャニングシステムで構成されています。このシステムには、異なる倍率を持つ2つのステージがあり、小型または大型のフィーチャーサイズグリッドとさまざまなプロセス設定で複雑なウェーハ設計に対応できます。ASML TWINSCAN XT:1250Dは、異なる照明順序で最大3つのビームを使用できる独自の光源技術を備えています。ビームはマイクロワットされ、ウェーハ上の正確なアライメントを確保するために同期されています。長時間露光モードを使用すると、速度や精度を犠牲にすることなく、より小さな機能を処理できます。このマシンはまた、チップの高さや設計に関係なく最適なプロセスパラメータを維持することができ、非常に動的な焦点制御を提供します。TWINSCAN XT 1250 Dは、最高品質の結果を保証するために、多くのイメージング技術を採用しています。これらには、非侵襲的な画像取得と複数の量子井戸(MQW)放射制御が含まれます。画像取得ツールは、ウェーハ表面の微妙な構造をすばやく検出することができ、Twinscan XTは幾何学的精度の点で競争の一歩先を行くことができます。このユニットには、さまざまな半導体生産要件に対応するさまざまなオプションが付属しています。これらには、オーバーレイエラーモニタリング、光学検査、または専用の窒素環境が含まれます。さらに、オプションの自動ツーリングアセットを使用すると、効率的なレベルの統合が可能になり、製造プロセスから手動のタスキングが削除されます。これにより、Twinscan XTは生産性とコスト効率に優れたユニットとなります。要約すると、ASML TWINSCAN XT 1250 Dは、複雑なウェーハ設計の正確なアライメントを、小型および大型の両方のフィーチャーサイズで提供できる2段階のウェーハステッパーです。それは高度なイメージング技術を利用し、異なった生産の必要性に適するためにカスタマイズすることができます。高いプロセス柔軟性と自動化されたツーリングにより、大量の半導体製造において信頼性の高い選択肢となります。
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