中古 VARIAN 3280 #154113 を販売中

Sputtering system, 6" Sources: (1) Mini Quantum, (1) CMI, (1) CMII Specifications: Dedicated 6" wafer handling capability Throughput: 45 wafer/hour for 1-micron aluminum alloy depositions Film thickness uniformity: ± 5% across 6" wafer for aluminum alloys, excluding outer 0.0625" of wafer ± 5% wafer to wafer and cassette to cassette for aluminum alloys, when measured at the wafer center Vacuum system: Process chamber: VARIAN Cryostack-12FA closed-loop helium cryopump 12" diameter pumping stack with integral fixed aperture Load lock: Pumped initially with 27 cfm direct drive mechanical pump to a pre-selected pressure When pressure set-point is reached, crossover to the cryopump occurs for continued load lock pumping Process chamber base pressure: 5 x 10^-7 Torr Deposition source: Type: DC dual cathode conical magnetron with independently powered cathodes Orientation: horizontally mounted sideways sputtering Typical deposition rates: Aluminum alloys: 10,500 Angstroms/min Refractory metal silicides: 3,600 Angstroms/min Cathodes: Outer: 9.7" diameter Inner: 5.4" diameter Cathode life: 3000 1-micron aluminum alloy depositions/cathode set Deposition power supply: (2) Power supplies provided for each sputter deposition source Operating range: 12kW maximum for outer cathode 3kW maximum for inner cathode Cathode power ratios: 4 ratios can be selected to optimize uniformity throughout cathode life Maximum cathode output current: 23A Open circuit voltage: 1400V Substrate heaters: Type: gas conduction, resistive heater element Maximum temperature: 400°C Temperature control: Chromel-alumel thermocouple closed-loop feedback to EUROTHERM temperature controller Facilities requirements: Electrical power: Main system: 200/208V, 35A, 50/60Hz, 3-phase 380V, 20A, 50/60Hz, 3-phase 480V, 16A, 50/60Hz, 3-phase Power supplies: 380V, 140A, 50/60Hz, 3-phase 480V, 112A, 50/60Hz, 3-phase Air: 80 to 120 psi at 10 cfm Water: 8 gpm at ≤ 20°C Dry nitrogen: 5 L/min at 20 psi Argon: 2 Torr-liters/sec 1985 vintage.