中古 ULVAC SCH-135A #9162023 を販売中

Horizontal inline sputtering system Deposit: ZnO + Ag + Ti Films on glass substrates Substrate size: 1100 mm x 1400 mm x 3~5 mm Tact time: 80 Sec per substrate System configuration: Loading chamber Heating chamber Sputtering chamber 1 (4 Cathode for ZnO) Intermediate isolation chamber Sputtering chamber 2 (3 Cathode for Ag, Ti) Isolation chamber Unloading chamber Vacuum chamber assembly Transfer assembly Internal jig assembly Heating assembly Sputtering cathode assembly Power supply assembly Frame / Conveyor assembly Pumping system Operation system Measurement system Gas inlet system Compressed air system Cooling water system Spare parts Substrate conditions Substrate type: Soda-lime glass substrate coated with amorphous silicon film Substrate size: 1100 (±1.5) x 1400 (+1.5) x 3t, 4t, 5t (mm) Processing capacity: Tact time: 1.3 Min per substrate (80 sec per substrate) Vacuum conditions: Ultimate pressure: Heating Sputtering Isolation chambers 8.0 x 10 Pa/better Evacuation time: Loading / Unloading chambers Sputtering conditions: Cathode type: σ Cathode for ZnO deposition σ Cathode for Ag deposition σ Cathode for Ti deposition Target type: ZnO Ag Ti Target dimensions: ZnO: W 200 x L 1620x T61B (mm) Ag: W 200 x L 1650 x T23/33 (mm) Ti: W 200 x L 1650 x T61B (mm) Film thickness / Film thickness uniformity: ZnO: 80 nm± 10% Ag: 210 nm± 10% Ti: 15 nm± 10% Heating condition: Case1: Right before ZnO cathode: 80° C ± 15° C or below (Sub.thickness: 4t) Right before Ag cathode: 80° C ± 15° C or below (Sub.thickness: 4t) Case2: Right before ZnO cathode: 120° C ± 15° C or below (Sub.thickness: 4t) Right before Ag cathode: 120° C ± 15° C or below (Sub.thickness: 4t) Transfer speed approximately: 833 mm/min Uptime: ≥ 85% MTBF: ≥ 192 Hours MTTR: < 7.7 Hours Power: 10 kW, DC power 2010 vintage.