中古 CPA 9900-1 #9173304 を販売中

Horizontal in-line sputtering system Process parameter control ranges: Sputtering pressure: 5 microns to 30 microns Conveyor speed: 0.1 to 80 cm.min D.C. Deposition power level: 100 to 9000 watts R.F. Deposition power level: 50 to 3000 watts R.F. Sputter clean power level: 15 to 1000 watts Substrate heating: Inline heating is variable from ambient to 350°C Uniformity performance: (Across 12” sputter zone) Etch: ±10% Deposition: R.F. Magnetron ±10% D.C. Magnetron ±5% Vacuum performance: Ultimate pressure (total system): 2X 10(-7) in 16 hours clean, dry and empty 5 x 10(-7) in 30 minutes Rate of rise: More than 6 minutes to 1 x 10(-4) torr clean, dry and empty Vacuum tight: Less than 5 x 10(-10) standard atmosphere cc helium/second Optional features: Multiple cathodes Multiple power supplies DC and RF in any mix With / Without sputter etch With / Without substrate heating Turbo pump Hi-Vac Cryo pump Hi-Vac Sputter up / Sputter down With / Without load lock Various numbers of process gases Rail bias Installed RGA With / Without window shutters Unequipped chamber for future expansion Target assembly sizes: 15”, 22”, 35”, and 50” Utility requirements: Power: 208 V 100 Amps 3 Phase 50 / 60 Hz 4 Wire delta 5 Wire wye Water temperature: 50° - 75° F (10-24°C) Air: 70 to 100 PSIG (6 to 8 ATU) filtered 1 CFM Sputtering gas: Typically 5 PSIG (1.3 ATU) Argon.