中古 JEOL JBX-5500FS #9131532 を販売中

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製造業者
JEOL
モデル
JBX-5500FS
ID: 9131532
ウェーハサイズ: 4"
ヴィンテージ: 2010
Direct Write E-beam Lithography System, 4" Specifications: General: Electron-beam lithography system that employs spot-beam vector scanning for sub-micron and nano-lithography Two selectable writing modes: High-resolution writing mode (5th Lens mode) for nano-lithography High-speed writing mode (4th Lens mode) for sub-micron lithography Accelerating voltage is also selectable either 25kV or 50kV Beam scanning speed: 12MHz Stage position is controlled by high-precision laser interferometer Control system: Microsoft® Windows® PC Minimum feature size: High-resolution writing mode 50Kv: </= 10 nm (at the field center) Overlay accuracy: High-resolution writing mode 50kV:</= 40 nm (3 sigma) High-speed writing mode 25kV (1200 um Field): </= 70 nm (3 sigma) Field stitching accuracy: High-resolution writing mode 50kV: </= 40 nm (3 sigma) High-speed writing mode 25kV (1200 um Field): </= 70 nm (3 sigma) Performance: Electron beam: Beam shape: Spot (Gaussian) beam Accelerating voltage: 50 kV, 25 kV Beam current: 30 pA to 20 nA Beam deflection method: Vector scan (Random access) Writing field: High-resolution writing mode: 50kV: Up to 100 um X 100 um 25kV: Up to 200 um 200 um High-speed writing mode: 50kV: Up to 1000 um 25kV: Up to 2000 um Beam positioning DAC: (18) bits Beam-positioning unit: High-resolution writing mode: 50kV: 0.5 nm 25kV: 1 nm High-speed writing mode: 50kV: 5 nm 25kV: 10 nm Beam scanning DAC: (12) bits High-resolution writing mode: 50kV: 0.5 nm x N 25kV: 1 nm x N High-speed writing mode: 50kV: 5 nm x N 25kV: 10 nm x N Beam scanning speed: 83.3 ns to 4 ms/scanning step size (12 MHz to 250 Hz, respectively) Field correction function: Deflection correction: Amplitude, Rotation Deflection aberration correction: Deflection distortion Stage movement: Method: Step and Repeat Stage position measurement: Laser interferometer Positional step size: lambda/1024 (approx. 0.6 nm) Stage movement range: 104 x 75 mm Writing area: 75 x 75 mm Moving speed: Up to 10 mm/s Material Transfer: Loader Manual loader: Single cassette loading mechanism Cassette (Substrate Holder) Wafer size: 2 to 4 inch Wafer loading/unloading: Manual Input pattern data: Data format: JEOL52(V3.0) Writing field: High-resolution writing mode: 50kV: Up to 100 um x 100 um 25kV: Up to 200 um x 200 um High-speed writing mode: 50kV: Up to 1000 um x 1000 um 25kV: Up to 2000 um x 2000 um Specified resolution: High-resolution writing mode: 50kV: 0.5 nm 25kV: 1 nm High-speed writing mode: 50kV: 5 nm 25kV: 10 nm Writing functions: Cyclic correction: Dose correction, Beam position correction, Beam deflection system correction Shot time modulation: Up to 256 ranks Field shift overlapping writing Design Functions: Data format: JEOL01 Data conversion output: JEOL52(V3.0) Draw-able figure: Rectangle, Circle, Polygon, Line, Ring Editing: Flip, Rotation, Copy & Paste, Duplicate, Grouping Utility: Reticular, Radial, Fresnel ring generator Figure map display: Display whole and partial drawing Others: JEOL52(V3.0) display Configration: Component Systems Electron beam column Electron source: ZrO/W emitter (Thermal field emission source) Electron beam optics: Beam alignment coil Beam blanker Lens (de-magnifying, illumination) Objective lens (4th Lens, 5th Lens) Beam deflector (1st Deflector, 2nd Deflector) Stigmator: Objective aperture (4 holes) Electron beam detection: Back-scattered electron detector, Secondary electron detector, Absorbed current detector Material-driving system: XY stage, Laser interferometer system Material transfer: Manual loader (one cassette can be loaded) Control CPU system Personal computer: HP series Workstation: SUN series Board CPU Evacuation system: Vacuum pumps, Valves Frame Anti-vibration: Mount Software Operating system Personal computer: Windows XP Workstation: Solaris 10 Writing preparation: Pattern design GUI System control: Main GUI, System calibration GUI, Writing GUI Installation requirements: Power Supply Voltage and Capacity: Single-phase, 100 V, 4 kVA: (2) Lines Single-phase, 200 V, 8 kVA: (1) Line Three-phase, 200 V, 4.8 kVA: (1) Line Power supply frequency tolerance 50 Hz regions: 47 Hz to 53 Hz 60 Hz regions: 57 Hz to 63 Hz Voltage variation tolerance For 1 cycle or more: -5% to +10 % For less than 1 cycle Sag (voltage sink): </= 10 % Surge (voltage rise): </= 10 % Notch: </= 200 V Spike: </= 200 V Grounding (forbidden to be used with other instruments) Ground wire (for exclusive use): 100 0hm or less (D class) For 0.15 MHz to 0.5 MHz: </= 79 dBuV (quasi peak value); </= 66 dBuV For 0.5 MHz to 30 MHz: </= 73 dBuV (quasi peak value); </= 60 dBuV For less than 0.15 MHz, compatible with the level at 0.15 MHz Primary Cooling Water Flow rate: 6 L/min (at 25 C) or 13 L/min (at 32 C) Supply pressure: 0.15 to 0.5 MPa gauge pressure at maximum Temperature: 15 to 32C Connection form: Braided hose (inside diameter 15 mm, outside diameter 22 mm) Overflow drain: No backing pressure pH (at 25 C): 6.0 to 8.0 Electrical conductivity (mS/m) (at 25 C): </= 30 Chloride ion (mg Cl–/L): </= 50 Sulfate ion (mg SO42–/L): </= 50 Total hardness (mg CaCO3/L): </= 70 Calcium hardness (mg CaCO3/L): </= 50 Ionic silica (mg SiO2/L): </=30 Iron (mg Fe/L): </= 0.3 Sulfide ion: Not detected Ammonium ion (mg NH4+/L): </= 0.1 High-pressure gas Material: Nitrogen gas or Clean Dry Air Supply pressure: 0.5 MPa Maximum flow rate: 50 L/min Connection form: 6 mm in diameter Low-pressure Gas Material: Nitrogen gas Supply pressure: 0.1 MPa Maximum flow rate: 50 L/min Temperature: 21 to 25 C Cleanliness: ISO Class 3 Purity: 99.999% or more Connection form: 1/4 inch in diameter Evacuate: For roughing vacuum pump Evacuating capacity: 500 L/min at 50 Hz, 600 L/min at 60 Hz Pressure: No backing pressure Connection form: NW25 Installation Space: 5.5 (W)x 3.5 (D)x 2.7 (H) m or more Entrance: 2.0 (W) x 2.1 (H) m or more Room Temperature: 21 to 25C Stability: Within +/- 0.2C/h (Main console area); Within 1C/h Other units area Humidity: 60% or less (non condensing) Airflow: about 0.3 m/s Stray magnetic field Commercial frequency: (BX2+BY2+BZ2)1/2 </= 0.1 uT Drift component: (BX2+BY2+BZ2)1/2 </- 0.1 uT Floor Flatness: +/-1 mm within 600 x 600 mm area Sound Noise Level 20 Hz-12500 Hz: </= 65 dB 20 Hz and under: </= 90 dB 2010 vintage.
JEOL JBX-5500FSは、高速・高スループットイメージング用に設計された走査型電子顕微鏡(SEM)です。これは、二次および後方散乱電子イメージング、陰極発光、光電子増倍管(PMT)イメージングなど、さまざまなイメージングモードで高解像度の画像をキャプチャすることができます。JBX-5500FSは高速電子光学カラムを備えており、10秒以内に画像を取得することができます。JEOL JBX-5500FSは、電界放射砲を搭載したサーミオン式SEMカラムを採用し、5kV低真空モードで非導電性試料の高コントラスト画像を実現しています。これにより、最大300,000xの高倍率でも画質が向上したナノスケール機能の検出が可能になります。JBX-5500FSは高精度のXY電動ステージを備えており、最高速度500 μ m/sでの移動が可能で、優れたイメージング性能を提供します。この顕微鏡は、自動化された完全にプログラム可能なクローズゾーンイメージングミニステージも備えており、スポットオンの再現性とサブミクロン精度を提供します。JEOL JBX-5500FSは人間工学に基づいたデザインで、21インチのTFTモニターを搭載しており、画像の操作や表示が容易です。また、形状、サイズ、分布を測定するための粒子解析スイート、光学画像を使用した機能を測定するためのツールなど、さまざまなツールを備えた統合された画像認識および分析ソフトウェアパッケージを備えています。JBX-5500FSは優れたエネルギーフィルタリング機能を備えており、ユーザーは最適なイメージングのために低エネルギーおよび高エネルギー電子をフィルタリングすることができます。フィルターおよび検出器は改善された対照および決断のために調節することができます。要するに、JEOL JBX-5500FSは、優れたイメージングおよびイメージング処理能力を備えた高性能スキャン電子顕微鏡です。ハイスループットイメージング用に設計されており、優れた画質とコントラストで迅速かつ正確なイメージング性能を提供します。
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