中古 HITACHI S-3000N #293820636 を販売中

Scanning Electron Microscope (SEM) Silicon Drift Detector (SDD) Secondary electron (SE) image: 3.0–3.5 nm at 25–30 kV in high vacuum (HV) mode Backscattered electron (BSE) image: 5.0 nm at 25 kV in variable pressure (VP) mode Some sources note: ~15 nm SE at 3 kV (HV) or 5 nm overall in VP mode at 25 kV Accelerating voltage: 0.3–30 kV Magnification: 15× to 300,000× (normal mode, ~65 steps); low-mag mode down to 5× (75 steps) Variable Pressure Range: 1 – 270 Pa (low vacuum/VP mode); high vacuum ultimate ~1.5 × 10⁻³ Pa Maximum Specimen Size: 150–200 mm diameter; height typically up to ~20–40 mm Working Distance (WD): Variable; X-ray/EDX optimized at 15 mm Detectors: Secondary electron detector (SE, high vacuum only) Solid-state Backscattered Electron Detector (BSE, four-quadrant for compositional, topographic, or 3D modes; usable in HV and VP) Absorbed current detector Specimen Stage: Common: X = 100 mm, Y = 50 mm, Z = 5–40 mm; tilt 0–60°; 360° rotation Other options include super-eucentric, large eucentric, or 5-axis stages with different ranges (e.g., ±90° tilt possible on some) Image Processing & Display: Frame memory: 640×480 (display), 1280×960 (high-res), optional 2560×1920 Features: Auto brightness/contrast (ABC), auto focus/stigmator, image integration, gamma control, recursive filtering (2) Pumps Chiller Spare manual stage Motorized stage EDAX Si(Li) detector EDAX Falcon compute EDAX Apollo EDS Genesis computer.