中古 ALLWIN21 AW 105R #9201878 を販売中

Plasma etcher, 2"-6" Wafer loading: 3-Axis robot Stationary cassette plate Plasma power: 600W Air-cooled Type: Parallel / Single wafer process Gas lines: 1-3 Lines MFCs Main frame with circuit breakers, solenoid valves Keyboard, mouse, cables Anodized reactor with door Chamber base plate with water sensor Upper and lower electrodes Quartz showerhead & diffusion disk Main control and distribution PCBs RF Matching network with PCBs RF Generator: 13.56MHz Center aligner / Cassette station: Two dimensions Four dimensions Base plate and ceramic ring: Reactor Chuck In-line filter and solenoid isolation valve: One MFC Two MFCs Three MFCs AC/DC Box: Temperature controller MKS Baratron: Isolation valve Throttle valve Main vacuum valve Front EMO, interlocks Touch screen GUI, 15" Asher rate: 0.5-1.5 um/Min (200 to 250 ºC) Bulk strip: 600 A/Min (100 ºC) Uniformity: <±8% (Max-min) Strip: <±5% (Max-min) Particulate: <0.05/cm2 Selectivity: >1000:1 MTBF / MTTA / MTTR: 450 Hours / 100 Hours / 3.5 Hours / Better Production-proven plasma asher / Descum Uniformity: Up to 3%-5% Frontside and backside isotropic removal Consistent wafer-to-wafer process cycle repeatability Element heating: Up to 250°C Wafer capability (50mm-150mm): Up to 6.25” substrate Thickness wafer: 50um Options: End-of-process (EOP) Vacuum pump Chiller: Chamber base plate Applications: GaAs, InP, GaN, SiC Wafer strip GaAs, InP, GaN, SiC Wafer descum Thin film head resist cleaning Opto-electronic devices cleaning MEMS Photoresist stripping: High dose implant Rework Post-polysilicon Post-metal Post-oxide Controlled resist removal: Post-develop descum Uniformity capability: (<5% 1σ) Plumbed process gases: O2, N2 Cooling water: GPM House circulating supply Facility exhaust: 100 CFM Power: 190-240VAC, single phase, 30A, 50/60Hz.