中古 ALLWIN21 AW 1008 #9201817 を販売中

Plasma etcher, 3"- 6" Wafer loading: 3-Axis robot Plasma power: Microwave Types: Parallel Single wafer process Gas Lines: 1-4 Production-proven plasma stripper / Asher system Frontside and backside isotropic removal Microwave 1000W: 2.45GHz Pressure control with throttle valve Main frame with breakers, relays and wires Keyboard, mouse, cables EMO, interlocks, and watchdog function Quartz tray: 3-4 inch, 4-6 inch, 5 inch, 6 inch, others Fixed cassette stations: One station Two stations Lamp heat module and quartz window 6" Quartz showerhead and 5" diffusion disk Main control Distributor PCB and DC Integrated solid robot: H1-7 x 10.5 Waveguide and quartz plasma tube Chamber top plate and body: Close loop temperature control (CLTC) Blowers: Magnetron Waveguide MFCs: 1 MFC, 2 MFCs, 3 MFCs, 4 MFCs CLTC: AC Box Lamp control PCB Main vacuum valves: Fast pump: Two, one Slow pump: One MKS Baratron Throttle valve Front EMO, interlocks Touch screen GUI, 15" Options: EOP Module with PCB Lamp tower alarm function Vacuum pump Downstream ashing: NO Bulk resist removal Single wafer process High-dose implanted resist Non-oxidizing metal processing Descum Pressure: 1.75 to 2.5 Torr Gas flow: O2: 4.5 SLPM N2: 0.5 SLPM Variable lamp time: 0-9999 seconds (AW) Variable temperature: 150°C – 350°C Vacuum chamber pump: 165 cfm Cabinet exhaust: >250 cfm Plumbed gases: O2 N2 Asher rate: 1.5u-5u/min Positive photoresist: >8u/min Negative Photoresist Uniformity: 15% Process dependent Particulate: <0.05 /cm2 Selectivity: >1000:1 MTBF / MTTN / MTTR: 450 Hours / 100 Hours / 3.5 Hours or better 95% Electrical requirements: 208VAC 3 Phase 60Hz 30Amps.