中古 VEECO / EMCORE E300 GaNzilla #141677 を販売中
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ID: 141677
MOCVD reactors / high efficiency GaN growth chambers, 2"
Set up for Sapphire, 21 pieces per run
EMCORE Confined Inlet FlowFlange with water-cooled cold plate
Removable 3-zone resistive Gen3 heater assembly with high temperature heat shields, insulators, and electrical feedthru's
EMCORE water-cooled Turbodisc susceptorless spindle rotation system
Integrated magnetofluidic rotation mechanism, motor and drive assembly
Complete reactor temperature management with water to water heat exchangers with temperature, flow, and water level alarms
Water-cooled baseplate assembly with thermocouple feedthru's and temperature regulation
Low differential pressure MFC's for alkyl distribution on FlowFlange
Pressure regulation network with low differential pressure MFC's for hydride and shroud distribution on FlowFlange
MFC purged 5-position viewport for in situ measurements
MKS 627 Baratron high temperature
Needle valves for gas purge of viewports and passthru flange
Mechanical span gauge for overpressure monitoring
DC power supplies for heater power
Dual differential pumped O-ring seals for reactor flanges with pump and pressure monitor
E300 GaN loadlock and platter transfer system:
High vacuum stainless steel loadlock chamber with viewports and (2) dwell stations for high throughput capability
(3) high purity SiC coated 12" wafer carriers
(1) blank SiC coated wafer carrier for temperature calibration
Pneumatically controlled, interlocked gate valve for isolation between growth chamber and loadlock chamber
GENMARK GB9 vacuum robot for wafer carrier transfer
Stainless steel end effect for robot transfer
MKS 622 Baratron for pressure measurement of loadlock chamber
Toxic gas sampling port
Mechanical span gauge for overpressure monitoring
Integrated glovebox wafer loading chamber with turntable
Interlocked, pneumatically controlled gate valve for isolation between loadlock chamber and glovebox
Automated antechamber with dedicated pump for wafer transfer
Regenerable Nitrogen purifier / recirculation system with automated control
Moisture monitoring with alarm ability
Storage shelves for extra wafer carriers / substrates
E300 pump system for growth chamber:
EBARA A70W process exhaust pump (297 cfm), water cooled motors, nitrogen purge system, microprocessor with alarm / control via digital interface
E300 vacuum exhaust system
3” exhaust line
Manual ISO-80 3” ball valve
Dual disposable high temperature particle filter
Pneumatic KF-40 ball valve
KF-40 leak detector port
Electronic pressure transducer
Throttling gate valve
Overpressure protection via switch gauge
E300 GaN loadlock pump system:
Turbomolecular pump for high vacuum
Pneumatic isolation 3” gate valve
ISO-100 protective stainless steel screen
High vacuum ion gauge
High vacuum convectron gauge
Low pressure nitrogen regulator
KF-25 leak detector port
Alkyl evacuation line
Dry scroll pump
(7) additional wafer carriers
SEKIDENKO 3-sensor pyrometer:
Single color optical fiber temperature measurement system
(3) pyrometer sensors
(3) optical fiber cables
Digital temperature display
Epimetric in situ monitor with dual head (EPI/2):
Absolute growth rate measurement
Real-time process stability verification
Includes computer and custom software
Standard system assemblies:
EMCORE E300 GaN gas panel sub assembly:
Switchable H2/N2 gas injection manifold for alkyl sources
High conductance H2, N2, and NH3 injection manifold
Metal sealed mass flow controllers for gas distribution
Electronic pressure measurement
Fast switching pneumatic valves for gas distribution
High purity fitting and tubing
1/8” bubbler legs in and out of each source
E300 uniframe system cabinet:
175” steel growth cabinet
Includes space for: growth chamber, loadlock, gas panel, refrigerator baths, vacuum system, and electronics
Interlocked clean lexan soft-seal doors
Solid panel soft-seal doors with louvers
Water cooled bath manifold
Gas panel: Alkyl sources:
(2) Cp2Mg single bubbler dilution network source manifolds:
Five valve high-purity welded manifold
Metal sealed mass flow controllers for source, carrier push gas, and diluted gas to injector manifold
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
(2) TMIn dual bubbler push configuration source manifold:
Five valve high-purity welded manifold
Metal sealed mass flow controllers for source, carrier gas push
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
TMGa dilution network source manifold:
Five valve high-purity welded manifold
Metal sealed mass flow controllers for source, carrier push gas, and diluted gas to injector manifold
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
TMAI standard source manifold:
Five valve high-purity welded manifold
Metal sealed mass flow controller
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
TMGa standard source manifold:
Five valve high-purity welded manifold
Metal sealed mass flow controller
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
TEGa standard source manifold:
Five valve high-purity welded manifold
Metal sealed mass flow controller
Metal sealed integrated pressure controller
Integrated spool piece for binary gas monitor
(2) NESLAB RTE-221W water-cooled liquid bath:
20.5 liters reservoir volume
Four digit digital display, -23°C to +150°C
Water-cooled heat exchanger
(2) NESLAB RTE-111W water-cooled liquid bath:
7 liters reservoir volume
Four digit digital display, -23°C to +150°C
Water-cooled heat exchanger
Phantom line for alkyl injector block:
Direct input metal sealed MFC to injector block
NESLAB RTE-211W water-cooled liquid bath
12.3 liters reservoir volume
Four digit digital display, -23°C to +150°C
Water-cooled heat exchanger
Gas panel: Hydride sources:
SiH4 single input with dilution manifold:
High purity welded manifold with interlocked source and purge valves
Metal sealed source calibrated MFC’s with carrier gas calibrated dilution network
NH3 dual input hydride manifold:
High purity welded manifold with interlocked source and purge valves
Metal sealed source calibrated MFC’s
Electronics and control:
System electronics and control modules, enhanced:
EMCORE standard control modules for substrate rotation, reactor temperature control, reactor pressure, system logic control and pump activation
Integrated power load center with emergency power off switch
+15. -15. +24 VDC power supplies
Dual microprocessor units with analog and digital control boards, input boards, and RS232 / Ethernet ports for communication
EpiView control and monitoring software:
Graphical display windows for all gas panel, growth chamber, and exhaust components
User-configurable parameters for valve states, analog scales and set points
Data logging and viewing with configurable data rate and signal selection
Export of data files to Microsoft Excel for analysis and presentation, with automatic data compression
On-line help
Advanced troubleshooting and diagnostic tools, automated maintenance
Report generator for run analysis
Event recording of system status and alarms
Definable levels for system security
EpiView industrial PC system:
Industrial based modular PC
Pentium III 1 GHz or greater processor
512 MB RAM, 250 MB ZIP drive, and 20 GB or greater hard drive
High resolution LCD monitor, 16 MB video card
(2) Network cards enabling PC system and PC facility connection
Microsoft Windows 2000, service pack 1 or higher
Microsoft Word and Excel 2000
Hydrogen detector:
International sensor technology rack mounted readout with alarm output
Dual solid state sensor transmitters
Currently installed and powered on in cleanroom
2004 and 2005 vintage.
VEECO/EMCORE E300 GaNzilla原子炉は、高品質の中高温ガリウム窒化物(GaN)材料を成長させるための強力な技術を組み合わせた最先端の結晶成長装置です。GaNzillaリアクターは、電子サイクロトロン共鳴(ECR)プラズマ源と高度な電子堆積システムを備えており、GaN材料の再現可能な単結晶層層別エピタキシーを作成します。これにより、材料の成長プロセスを正確に制御できます。GaNzillaで使用されるECR源は、幅広い背景で高密度、高エネルギーのプラズマを生成することができます。これは、調整可能な周波数磁界発生器、特別なカスプ・トラップ、および調整可能なガス流量ユニットを含む専用ハードウェアの組み合わせにより、高イオンエネルギー、高い蒸着速度、低い粒子閉塞をもたらします。ECRソースに加えて、Electronic Deposition (EDS)マシンは、蒸着プロセスを正確に制御します。EDSツールには独自のモル触媒ソリューションが使用されており、調整可能なマイクロ波場発電機を使用することで、低圧、低消費電力、低温CVDプロセスを実現しています。これにより、標準材料よりもはるかに低い温度でGaN層を堆積させることができ、高品質の材料とより良い収率をもたらします。VEECO E300 GaNzillaには、GaN材料を成長させるための理想的な選択肢となる他の多くの機能が付属しています。これらの機能には、タッチスクリーン付きのユーザーフレンドリーな液晶ディスプレイ、薄型設計の真空チャンバー、ステンレス構造、オペレータの安全性を確保するための多数の安全機能が含まれます。EMCORE E300 GaNzillaは、研究および産業用途の両方に使用できる汎用性と強力な原子炉です。GaNzillaは、高品質の材料と安全で効率的な成長のための資産を備えており、幅広い用途のためのGaN材料の生産に最適です。
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