中古 AMAT / APPLIED MATERIALS AMP-3300 #9201707 を販売中

PECVD System Silicon nitride / silicon dioxide dielectric films: Plasma-enhanced chemical vapor deposition system Low-temperature Four controlled process With reactor process chamber: Radio frequency (RF) power Chamber pressure Chamber temperature / Gas flows Plasma energy field is generated by RF power in the process chamber Evacuated with a vacuum roughing pump / Motor-driven roots blower Screwless electrode Dual gas manifold 42 Pieces of 3-inch wafers 22 Pieces of 4-inch wafers 16 Pieces of 5-inch wafers Deposition Rate: 300 A/Min Temperature capability: Up to 300°C RF Power: Up to 1500 W Process Gases: Oxide deposition: N2O & SiH4 Nitride deposition: SiH4, NH3, N2 Controller with real time process data collection / Control User access: Password control Complete system / Process parameters: Customer programming recipe Process parameters recorded on system computer Power Supply: Closed-loop RF Water Pressure: 30-80 psig Standard flow at 3 gpm (11.4 liters/minute) filtered to 100 to 125 microns. AMP-3300, 68″ Dimensions: Width: 173 cm x 37″ Depth: 93 cm x 51″ Height: 129 cm Water temperature: Maximum inlet temperature: 77 F (25°C) Minimum: 68 F (20°C). Water resistivity: >20,000 ohms cm Ambient air relative humidity: 40% or less Process gases: N2 at 30 psig Delivered at 20-30 psig N2 Pump purge: 30 Liters / Minute at psig to dilute residual reactant gases Pneumatic air: 80-100 psig Exhaust: 2-1/8-inch (54 mm) O.D. Mechanical pump with proper purging to dilute residual reactant gases Power: 208 VAC +/-5%, 3 Ph, 80 Amps, 60 Hz, 5-wire wye 380 VAC +/-5%, 3 Ph, 50 Amps, 50 Hz, 5-wire wye.