中古 FEI Helios NanoLab 450S #9268041 を販売中

Focused Ion Beam (FIB) system Electron source: SCHOTTKY Thermal field emitter STEM Resolution: 0.8 nm Ion source: Gallium liquid metal Running hours: 1,000 Landing voltage: SEM: 50 V - 30 kV FIB: 500 V - 30 kV SEM Resolution: Optimal WD: 0.8 nm at 15 kV 0.8 nm at 2 kV 0.9 nm at 1 kV 1.5 nm at 200 V With beam declaration Coincident WD: 0.8 nm at 15 kV 0.9 nm at 5 kV 1.2 nm at 1 kV Ion beam resolution at coincident point: Preferred statistical method: 4.5 nm at 30 kV Selective edge method: 2.5 nm at 30 kV Stage: Flipstage with in-situ STEM detector OMNIPROBE Sample extractor 5-Axis piezo motorized XY Motion: 100 mm Loadlock: Maximum 80 mm diameter Sample types: Wafer pieces TEM Grids Whole wafers: Up to 100 mm User interface: Windows GUI with integrated SEM FIB Gas Injection System (GIS) Patterning Imaging mode Detectors: ETD, TLD, ICE Chamber 1: Carbon C10H8 Chamber 2: Tungsten W(CO)6 Chamber 3: Platinum C5H4CH3Pt(CH3)3 Remote components: NESLAB ThermoFlex900 chiller XDS10i Pre vacuum pump ONEAC Transformer: 200V AC, Single phase APCO UPS: 100V AC, Single phase EDS Resolution: <30 nm on Thinned samples Does not include Hard Disk Drive (HDD).