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1851 results for found: 中古 Ion Implanters & Monitors

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    APPLIED MATERIALS 9500xR Ion implanter.
  • AIBT / ADVANCED ION BEAM TECHNOLOGY: ISTAR

    AIBT / ADVANCED ION BEAM TECHNOLOGY iStar Ion implanter Asyst IsoPort 9700-9129-01 Rev. E Wafer Loader Asyst Teach Pendant (3) Asyst Fan/Filter Assemblies Asyst 14001-003 1515mm Linear Positioning Track Copley 8001052 Amplifier/Driver Ion Systems 5024 Controller with five 5285E Aerobar Ionizers Includes some manuals and software disks Missing: (3) Asyst IsoPort Loaders Wafer Robot Prealigner.
  • AMAT / APPLIED MATERIALS: QUANTUM X

    APPLIED MATERIALS Quantum X High current ion implanter, 8" Can be retrofitted as a 12" unit Application: High current Wafer shape: SNNF Energy: LEAP Ultra low (0.2-80KeV) Toxic exhaust: Top Utilities entry: Bottom Water fittings: Metric Enclosure exhaust fans: no Distance remote: 15 meter Configurable signal tower: Standard Turbo pumps: Seiko Seiki on beamline (3) Cryo pumps Alcatel iPUPs Hiden RGA Loadport stations: 3 Loadport station type: Applied door openers (ADO) End-effector typE: Low backside particle Vac Processor enclosure doors: no Ion source Ultralife III Source Tungsten G1 Front plate on all sources Vaporizers: no Gas panel box: Unit MFCs for Argon (inert and PFS) TEM: yes Gas Panel One: Position 1 Process gas BF3 Gas delivery system SDS MFC Selection: Unit 1662 Bottle fitting: BF3 (VCR) Bottle support 40-110MM Second bottle support: No Gas Panel Two: Position 2 Process Gas None Gas Panel Three: Position 3 Process gas AsH3 Gas delivery system SDS MFC Selection: Unit 1662 Bottle fitting: AsH3/PH3 (VCR) Bottle support 40-110MM Second bottle support: No Gas Panel Four: Position 4 Process gas PH3 Gas delivery system SDS MFC Selection: Unit 1662 Bottle fitting: AsH3/PH3 (VCR) Bottle support 40-110MM Second bottle support: No Gas Panel Five: Position 5 Process gas None Gas Panel Six: Position 6 Process gas None Manual eDocs CD Cleanroom paper manual Qualifications failed after Etest parameter OOS Poly 2 Currently located in a fab, powered on and can be inspected, idle 2004 vintage.
  • AMAT / APPLIED MATERIALS: QUANTUM III

    APPLIED MATERIALS Quantum III Ultra low energy implanter, 8".
  • AMAT / APPLIED MATERIALS: QUANTUM III LEAP

    APPLIED MATERIALS Quantum III LEAP Ultra low energy implanter, parts system.
  • AMAT / APPLIED MATERIALS: XR120

    APPLIED MATERIALS xR 120 High current implanter, 8" BF3, AsH3, PH3 1998 vintage.
  • AMAT / APPLIED MATERIALS: 9500XR

    APPLIED MATERIALS 9500xR Implanter Direct drive 1995 vintage.
  • AMAT / APPLIED MATERIALS: 9500XR

    APPLIED MATERIALS 9500xR Implanter, 8" Direct drive 1995 vintage.
  • AMAT / APPLIED MATERIALS: XR200S

    APPLIED MATERIALS XR200S Implanter, 5" 208 V, 3 phase, 50/60 Hz Max con. power: 65 kVA Max con running current: 180 A Circuit breaker: 250 A Single largest load: 90 A (beamline Iso Tx) Interrupt capacity: 65000 A 2001 vintage.
  • AMAT / APPLIED MATERIALS: XR200S

    APPLIED MATERIALS XR200S Implanter, 5" 208 V, 3 phase, 50/60 Hz Max con. power: 65 kVA Max con running current: 180 A Circuit breaker: 250 A Single largest load: 90 A (beamline Iso Tx) Interrupt capacity: 65000 A 2001 vintage.
  • AMAT / APPLIED MATERIALS: XR80 LEAP

    APPLIED MATERIALS 80xR Leap Implanter, 8" 80 keV IHC Style.
  • AMAT / APPLIED MATERIALS: QUANTUM LEAP III

    APPLIED MATERIALS Quantum Leap III Ion implanter End station: Brooks ABM 405, 4 stations Vacuum: (2) CTI OB-10, (1) STP1303CV3, (1) STP451C, (1) BOC QDP 40 Cooling system: Water cooling, SWEP B35MX3P/1P-SC heat exchanger Operation interface & software: V4.17 Transfer Arm: 200mm Wheel Type (Si coating): 200mm Implant angle: Automatic, recipe-controlled +/- 10 degree Energy capacity: 0-80KV (45KV for Sb+) Beam current capacity: Up to 25mA, subject to species and energy. Unniformity: 1s ? 0.5% Particle Control: < 0.1 added per cm2 with > 0.16um particles Metal contamination: Al <1E12 atoms/cm2 for doses <5E15 atoms/cm2 Energy contamination: < 0.5% or 100V, whichever is larger Temerature Check: <100 degree Species Resolution: M/?M>80 Gas bottle type: (4) SDS In-vac wafer handling: (1) 0011-92528 Wheel assembly 200mm (17) Clip assy (17) Fix restraint (17) 0011-00989I Sensor assy PW (1) 0011-93088 Assy.WOHS sensor (1) 0011-01034 Clip actuator assy (1) Wheel hard stop (1) 0011-92491 Gripper arm assy 200mm (1) Gripper cylinder (17) 0040-07593 Heatsink (1) 0020-6905 Blade arm assy (1) 1193219 Blade assy In-air wafer handling: (1) 0230-00286 Dummy cassette (2) 0045-90713 Dedicated casssette Control circuit: (1) 0130-01041 Gripper PCB.
  • AMAT / APPLIED MATERIALS: XR80

    APPLIED MATERIALS xR80 High current ion implanter, 8" Tool status: Warm shutdown Software version: 4.13.05 CIM Linked Hardware configuration: (1) Xr-Leap implanter (1) Heat exchanger Hardware configuration: (1) GRC System (1) Heat exchanger Hard disk: 4 GB RAM: 128 MB Cooling system: Heat exchanger / Closed loop de-ionized water cooling system Wafer loader: (3) Carousel paddles Wafer orienter: Batch notch orient Wheel chamber: (17) Heatsinks (200 mm) Control system: Fibre optic communication network (DAQs) Control module: VME Microprocessor Plasma flood gun: PFS (Plasma flood system) Beamline: IHC (Indirect heated cathode) Gas panel option: SDS (Safe Delivery System) toxic gas modules: AsH3 and PH31 High pressure toxic gas module: BF3 Tilt: Variable implant angle, +/- 7º Source bushing: Enhanced Currently deinstalled 1997 vintage.
  • AMAT / APPLIED MATERIALS: XR120

    APPLIED MATERIALS xR 120 High current implanter, 8" Handling SMIF Pumps: QDP40 & QDP80, EH500 Cryo compressor: CTI 9600 Source: Bernas 1997 vintage.
  • AMAT / APPLIED MATERIALS: QUANTUM II LEAP

    APPLIED MATERIALS Quantum II Leap High current ion implanter, 12" Rough pumps: Edwards Turbo pumps: Leybold 340M and MAG W 1500C 6-Position Gas Panel: BF3(SDS), nil, AsH3(SDS), PH3 (SDS), Xe(HP), N2 Standard Gripper Beam-off- Vacuum: Source 4e-8, MRS 2.6e-7, Chamber 3.3e-6 Wheel vibration sensor: 1.6 mm/s mean average Software version 4.17.00 Beta, PMAC 1-16C Currently installed 2003 vintage.
  • AMAT / APPLIED MATERIALS: 9210

    APPLIED MATERIALS 9210 High current ion implanter, 8" Dual loadlock In-vac robot Hardware configuration: Processor module Beamline module Terminal module Power and control module Cryo compressor Beamline enclosure Wafer loader enclosure Electrodes MRS Tube Scum box Control module Wheel CGA 330 Gas bottle Wafer handler Cryo pump rack & heat exchanger Pumps: (2) CTI Cryopumps Diffusion pump LEYBOLD Turbovac 316C EDWARDS Dry pumps Energy : Extraction: 20 kV Acceleration: 160 kV (Max. beam energy 180 keV) Beam current: 100 µA - 20 mA (depends on species, energy) Tilt capabilty: 10° Wheel chamber: (17) Heatsinks for 200mm wafers Source type: Bernas (2) Vaporizers Gas system: External Ar (2) High pressure gas modules.
  • AMAT / APPLIED MATERIALS: 9500XR

    APPLIED MATERIALS PI 9500xR High current ion implanter, 8", 1996 vintage.
  • AMAT / APPLIED MATERIALS: QUANTUM 2

    APPLIED MATERIALS Quantum 2 Implantation high current, 12". APPLIED MATERIALS Quantum implanter.
  • AMAT / APPLIED MATERIALS: QUANTUM 2

    APPLIED MATERIALS Quantum 2 High Current Ion Implanter, 12".
  • AMAT / APPLIED MATERIALS: 9500XR

    APPLIED MATERIALS 9500xR Ion implanter Missing parts Currently installed.
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