中古 ULTRATECH Saturn Spectrum 300 #9198660 を販売中

Stepper Mainframe configurations: Controller unit: Centralized control and distributed control SECS Compatibility Exposure unit: Hg Lamp GHI-Line light source Indexer unit: Two cassette loader / Unloader Universal wafer size Transfer unit: Robot Can handle 6", 8" and 12" wafers, both notch and flat type Wafer stage unit: Linear motor XY stage Reticle stage Automated wafer thickness compensator Alignment unit: Pre-alignment: Automatic enhanced global alignment Through the lens alignment MVS (Machine vision system) pattern recognition system Closed loop dose control system Focus detector and focus leveling system Operation unit: Alignment monitor Program execution monitor Keyboard or joy-stick Printer Safety unit: Vibration isolation system Auto alarm system Interlock protection system Hardware specification: Notch and flat wafer SEMI and JEIDA standard Wafer thickness: 11-30 mil Stage type: Linear motor drive 3-Axes of freedom Wafer handling: Cassette to cassette Conform to SEMI and JEDIA standard Hg Lamp type: 1000 Watt Reticle size: 6 x 6 x 0.25 inch Reticle library: (12) Slots library with barcode reader Fields per reticle: 1-4 6 x 6" -2- field, max field size: 44.0 x 26 mm 6 x 6" -3- field, max field size: 37.6 x 26 mm 6 x 6" -4- field, max field size: 27.6 x 26 mm Maximum field size: 44 x 22 mm Global alignment: Within ± 40 µm placement accuracy Enhanced global alignment: 500 nm, 3δ (Reticle image recognition alignment system) Alignment optical system: Bright field alignment Up-time: ≥90% MTTR: <4 Hours Reliability test: Cycling test: > 500 wafers (with alignment) processed without reject and fail Wafer breakage: ≤ 1/ 10000 Vibration control: Active air isolation Computer / Printer type: VME Bus controller CPU: ≥35 MHz Color graphic monitor Enclosed impact printer Process specification: Minimum feature size: ≤1.40µm DOF (Depth of focus): ≥ 4 µm (at 2 µm L/S with 2 µm thickness of resist) ≥ 8 µm (at 30/10 µm L/S with 23 µm thickness of resist) ≥10 µm (at 50 µm L/S with 120 µm thickness of drvr film) Dynamic focus: Provides capability of exposing photosensitive films from 1- 125µm CD Uniformity: ≤±10% Irradiance at wafer plane: ≥1200mW/Cm² Maximum image area: 44 X 26 mm² Exposure spectrum: 350 - 450nm (GHI-line/ Full spectrum) Exposure uniformity: ≤ ±4% Alignment accuracy: ≤ 0.5 µm (3δ) Throughput: 8-inch wafer, 400mj/ Cm², 44 x 22 mm field size, wafer layout 26 steps: >60 wph Exposure linearity:≤ ±1% 2005 vintage.