中古 AIXTRON Tricent #9190702 を販売中

Atomic layer deposition system, 12" Frame: Tricent ALD Process cluster oxide Gas mixing system Precurson liquid delivery system ALD Reactor Vacuum and cooling systems (2) Tricent ALD Heat exchangers: 220°C Automatic wafer transfer system Tricent ALD double O-ring pump Options: Tricent ALD Ozone generator for 2 PMs Tricent ALD set of precursor tanks for vaporizer for 2 PM's Automatic wafer transfer system: Fully automated cassette-to-cassette wafer loading and unloading Configurations: 25 x 300 mm (3) FOUP loading ports Loadlock A: Batch 25 x 300 mm Loadlock B: Batch 25 x 300 mm Vacuum handling platform: 4 MESC-type process modules Wafer handling platform includes: Front end atmospheric module Front end atmospheric robot Vacuum transport chamber and frame MagnaTran magnetically driven Fully encapsulated vacuum robot Transfer arm with high temperature end effector Wafer alignment module Tricent ALD O-Ring pump: PM1/PM2 Tricent ALD Process cluster oxide: (2) Deposition modules Each PM: Gas mixing system Ventilated gas mixing cabinet Electro-polished 316 SUS tubing VCR-Connectors all orbital welded Individual control valves: Pressure indicator switch Check valves Particle filters Pneumatic valves Gas line: Reactive gas line: 03 including Destruct Purge gas line: Ar High-Flow / Low-Flow purge configuration Electronic flow controllers and pneumatic valves for various purge lines Individual pneumatic valves for reactive gas line Individual downstream pressure controls with electronic mass flow meters for: (3) reactive gas line and various purge lines ALD valve block with high-speed switching ALD valves for reactive gas and various purge lines ALD valve block temperature-controlled and adapted to reactor lid Safety configuration: Normally closed Precursor liquid delivery system: (2) Liquid precursor lines Electronic mass flow controller Pressure controller Pneumatic valve for solvent line Liquid flow meters 3-position liquid medium valves for each precursor line Individual manual separation valves Electronic mass flow controller Pressure controller Pneumatic valve for solvent line Optional: precursor and solvent tanks (1) Mist preparator wand, 1.8 liter nominal volume Single-Injector Tri-Jet liquid precursor evaporation systems: (2) Contact-less cylinder evaporators Individually controlled temperature range: 40 C - 250 C High precision injectors for the liquid precursor lines Joint Pre-heated carrier gas line Temperature controlled: 40 C - 230 C Spare provision: He purge line Joint run-vent-purge stack Temperature controlled: 40°C - 230°C Separate precursor box with room temperature bubbler Ventilated enclosure with Nitrogen purge line Smoke detector and ventilation flow sensor integrated in Precursor Box Single room temperature bubbler for high vapor pressure precursors with TMA Control valve with pressure indicator switch Particle filter Downstream pressure control with electronic mass flow meter Dual 2/2 way valve for carrier line Single joint run line with ALD valve ALD reactor: Reactor cabinet Hot wall aluminum reactor chamber, max 220°C. Showerhead with separation between reactive gas and metal-organic precursor flows Reactor walls, reactor lid, and showerhead assembly temperature controlled by heat exchanger with thermal liquid Thermal liquid Aluminum nitride substrate heater Closed-loop temperature controlled resistive heater Wafer transfer lift pin mechanism with vertically movable substrate heater assembly. Wafer transfer MESC port with pneumatic slit valves Vacuum system: Pressure sensors and pressure controllers Designed for process pressure: up to 10 mbar Heated exhaust line up to outlet flange on the process module Throttle valve and check valves Cooling system: Type: Julabo Digital flow meters, temperature transmitters, and manual separator valves for each cooling branch. Tricent ALD Heat exchanger One per module required for system operation For operation with thermal liquid (Thermal H 250) Maximum operating temperature 220°C. 2008 vintage.